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esmt/emp ema2011 elite semiconductor memory technology inc./elite micropower inc. publication date: jul. 2010 revision: 2.1 1/18 2.7w mono filter-less class-d audio amplifier features z supply voltage range: 2.5 v to 5.5 v z support single-ended or differential analog input z low static operation current z low shut-down current z short power-on transient time z internal pull-low resistor on shut-down pins z short-circuit protection z over-temperature protection z loudspeaker power within 10% thd+n ? 1.66w/ch into 8 loudspeaker ? 2.70w/ch into 4 loudspeaker z loudspeaker efficiency ? 90% @ 8 , thd+n=10% ? 85% @ 4 , thd+n=10% z msop-8, tdfn-9 and wlcsp-9 packages z integrated de-pop circuitry z internal generated 450khz switching frequency applications z monitor audio z pda z portable multimedia devices z notebook computer z mobile phone description the ema2011 is a mono, filter-less class-d audio amplifier. operating with 5.0v loudspeaker driver supply, it can deliver 2.7w output power into 4 loudspeaker within 10% thd+n or 2.2w at 1% thd+n. the ema2011 is a mono audio amplifier with high efficiency and suitable for the notebook computer, and portable multimedia device. functional block diagram pwm generator loudspeaker driver + - + - ~300k ~300k overload, voltage & thermal protection -wave generator ~300k vdd inp inn vop von sd r in r in c in c in differential input + - gain=300k /r in gnd c s
esmt/emp ema2011 elite semiconductor memory technology inc./elite micropower inc. publication date: jul. 2010 revision: 2.1 2/18 typical application circuit
esmt/emp ema2011 elite semiconductor memory technology inc./elite micropower inc. publication date: jul. 2010 revision: 2.1 3/18 pin assignments msop-8 order information ema2011-50ma08grr 50 5.0v operation ma08 msop-8 package grr rohs (pb free) rating: -40 to 85c package in tape & reel nrr rohs & halogen free (by request) rating: -40 to 85c package in tape & reel tdfn-8 order information ema2011-50ff08nrr 50 5.0v operation ff08 tdfn-8 package nrr rohs & halogen free (by request) rating: -40 to 85c package in tape & reel wlcsp-9 order information EMA2011-50WL09GRR/nrr 50 5.0v operation wl09 wlcsp-9 package grr rohs (pb free) rating: -40 to 85c package in tape & reel nrr rohs & halogen free (by request) rating: -40 to 85c package in tape & reel
esmt/emp ema2011 elite semiconductor memory technology inc./elite micropower inc. publication date: jul. 2010 revision: 2.1 4/18 order, mark and packing information package product id marking packing msop-8 ema2011-50ma08grr 3k units tape & reel tdfn-8 ema2011-50ff08nrr 1 2 3 4 8 7 6 5 5k units tape & reel wlcsp-9 EMA2011-50WL09GRR c ba 1 2 3 emp tracking code 3k units tape & reel
esmt/emp ema2011 elite semiconductor memory technology inc./elite micropower inc. publication date: jul. 2010 revision: 2.1 5/18 pin description pin name msop-8 tdfn-8 wlcsp-9 io type description sd 1 1 c2 i shutdown ema2011 (low active logic) inp 2 3 a1 i positive differential input nc 3 2 n/a nc no internal connect inn 4 4 c1 i negative differential input vop 5 5 a3 o positive output vdd 6 6 b2 p power supply gnd 7 7 a2, b3 g power ground von 8 8 c3 o negative output thermal pad n/a 9 n/a g must be connected the package thermal pad to pcb thermal land. available package package type device no. ja ( o c/w) exposed thermal pad msop-8 190 no tdfn-8 (3x3mm) 45.8 yes wlcsp-9 ema2011 128 no absolute maximum ratings symbol parameter min max unit vdd supply for analog cells & loudspeaker driver 2.5 6.0 v input voltage -0.3 5.5 v t stg storage temperature -65 150 o c t a ambient operating temperature -40 85 o c recommended operating conditions symbol parameter min max unit vdd supply for analog cells & loudspeaker driver 2.5 5.5 v v ih high-level input voltage 70% x vdd vdd v v il low-level input voltage 0 35% x vdd v
esmt/emp ema2011 elite semiconductor memory technology inc./elite micropower inc. publication date: jul. 2010 revision: 2.1 6/18 general electrical characteristics ( t a =25 o c) electrical characteristics and specifications for loudspeaker z gain= 2 v/v, load=8 , f in =1 khz (unless otherwise noted) symbol parameter condition min typ max unit thd+n = 10 % 1.66 w vdd=5.0v thd+n = 1 % 1.35 w thd+n = 10 % 0.85 w vdd=3.6v thd+n = 1 % 0.68 w thd+n = 10 % 0.39 w p o rms output power vdd=2.5v thd+n = 1 % 0.31 w vdd=5.0v, po=1.0w 0.24 % vdd=3.6v, po=0.5w 0.34 % thd+n total harmonic distortion plus noise vdd=2.5v, po=0.2w 0.4 % snr signal to noise ratio vdd=5.0v, po=1.0w 94 db psrr power supply rejection ratio vdd=3.6v, v ripple =200mvpp inputs ac grounded with ci=2 f f=217 hz -60 db cmrr common-mode rejection ratio vdd=3.6v, v ic =1vpp, f=217hz -50 db v n output integrated noise (a-weighted) vdd=3.6v f in =20hz ~ 20khz 80 v efficiency vdd=5v, thd+n=10% 88.5 % symbol parameter condition min typ max unit iq operating current vdd=sd=5v 5.7 ma i pd supply current during power-down mode vdd=5.0v; sd#=0 2 50 ? v offset output offset voltage input ac grounded, vdd=2.5v ~ 5.0v 5 25 mv ts d junction temperature for driver shutdown 145 150 155 o c thys temperature hysteresis for recovery from shutdown 115 120 125 o c f sw switching rate of loudspeakers driver 300 450 600 khz ton turn-on time vdd = 3.6 v 1 4 msec r sc loudspeaker short-circuit detect resistance vdd = 5.0 v 2.8 3.2 ohm
esmt/emp ema2011 elite semiconductor memory technology inc./elite micropower inc. publication date: jul. 2010 revision: 2.1 7/18 z gain= 2 v/v, load=4 , f in =1 khz (unless otherwise noted) symbol parameter condition min typ max unit thd+n = 10 % 2.7 w vdd=5.0v thd+n = 1 % 2.2 w thd+n = 10 % 1.3 w vdd=3.6v thd+n = 1 % 1.1 w thd+n = 10 % 0.6 w p o rms output power vdd=2.5v thd+n = 1 % 0.5 w vdd=5.0v, po=2.0w 0.24 % vdd=3.6v, po=1.0w 0.34 % thd+n total harmonic distortion plus noise vdd=2.5v, po=0.5w 0.4 % snr signal to noise ratio vdd=5.0v, po=1.8w 94 db psrr power supply rejection ratio vdd=3.6v, v ripple =200mvpp inputs ac grounded with ci=2 f f=217 hz -60 db cmrr common-mode rejection ratio vdd=3.6v, v ic =1vpp, f=217hz -55 db v efficiency vdd=5.0v, thd+n=10% 80 %
esmt/emp ema2011 elite semiconductor memory technology inc./elite micropower inc. publication date: jul. 2010 revision: 2.1 8/18 typical characteristics (gain= 2 v/v, unless otherwise noted)
esmt/emp ema2011 elite semiconductor memory technology inc./elite micropower inc. publication date: jul. 2010 revision: 2.1 9/18 turn-on time idd vs vin (rl= 8) 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 2.4 2.8 3.2 3.6 4.0 4.4 4.8 5.2 5.6 vdd(v) idd(m a) z emi test ? cispr22 class b (vertical)
esmt/emp ema2011 elite semiconductor memory technology inc./elite micropower inc. publication date: jul. 2010 revision: 2.1 10/18 z emi test ? cispr22 class b (horizontal) z gsm power supply rejection vs frequency
esmt/emp ema2011 elite semiconductor memory technology inc./elite micropower inc. publication date: jul. 2010 revision: 2.1 11/18 z efficiency ema2011 effciency[%] test vdd=5,3.6,2.5v rl=8ohm 0.00 20.00 40.00 60.00 80.00 100.00 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 outpower[w] effciency[%] vdd=5v vdd=3.6v vdd=2.5 ema2011 effciency[%] test vdd=5,3.6,2.5v rl=4ohm 0.00 20.00 40.00 60.00 80.00 100.00 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 outpower[w] effciency[%] vdd=5v vdd=3.6v vdd=2.5v
esmt/emp ema2011 elite semiconductor memory technology inc./elite micropower inc. publication date: jul. 2010 revision: 2.1 12/18 operation descriptions z self-protection circuits (typical values are used below.) ema2011 has built-in over-temperature, overload and under-voltage detectors. (i) if the internal junction temperature is higher than 150 o c, the outputs of loudspeaker drivers will be disabl ed and connected to ground and the temperature hysteresis for ema2011 to return to normal operation is about 30 o c. the variation of protect ed temperature is around 10%. (ii) to protect loudspeaker drivers fr om current damage when the wires connected to loudspeakers are shorted to one another or shorted to gnd, circuits for the detection of output loading ar e built in the ema2011. for normal operation, loudspeaker resistance is larger than 3.2 is required. otherwise, overload detectors may activate. once overload detector is active, loudspeaker drivers will be disabled and at low state. ema2011 will be reco very from overload fault by pulling sd# down to low and back to high after removing the short. once the lines connected to loudspeakers are shorted to vdd, ema2011 will be burnt. (iii) when the vdd voltage is lower t han 2.1v, ema2011 will disable and loudspeaker drivers are at low state, cease ema2011 beside voltage detector circuit. when vdd becomes larger than 2. 2v, ema2011 will return to normal operation. z anti-pop design ema2011 is with anti-pop design. annoyi ng pop sounds during initial power on and power down/up are suppressed. when one of the operations mentioned above is applied, ema2011 will intern ally generate appropriate cont rol signals to suppress pop sounds. application circuit information z input resistors (r in ) and input capacitors (c in ) the total gain of the audio amplifier (ema2011) is set by input resistor (r in ) according to the following equation (a). t he performance at low frequency (bass) is affected by the corner frequency (f c ) of the high-pass filter composed of input resistors (r in ) and input capacitors (c in ), determined in equation (b). () () a v v r k gain in l l l = 300 () () b hz c r f in in c l l l 2 1 = for differential audio signal applicat ion, the input capacitors (c in ), for dc decoupling, are not required. when singl e-ended audio source is used, the input capacitors (c in ) are required.
esmt/emp ema2011 elite semiconductor memory technology inc./elite micropower inc. publication date: jul. 2010 revision: 2.1 13/18 z cost effective application circ uit for fully differential input z suggested application circuit fo r fully differential input z suggested application circui t for single-ended input
esmt/emp ema2011 elite semiconductor memory technology inc./elite micropower inc. publication date: jul. 2010 revision: 2.1 14/18 package dimensions z msop - 8l o symbpls min. nom. max. a 1.1 a1 0 0.15 a2 0.75 0.85 0.95 d 3.00 bsc e 4.90 bsc e1 3.00 bsc l 0.4 0.6 0.8 l1 0.95 bsc 0 8 unit: mm
esmt/emp ema2011 elite semiconductor memory technology inc./elite micropower inc. publication date: jul. 2010 revision: 2.1 15/18 package dimensions z tdfn - 8l (3x3x.75 mm) common dimensions millimeter dimensions inch symbol min. nom. max. min. nom. max. a 0.70 0.75 0.80 0.027 0.029 0.031 a3 0.203 bsc 0.008 bsc b 0.25 0.30 0.35 0.009 0.011 0.013 d 2.85 3.00 3.15 0.111 0.117 0.122 d2 2.20 2.30 2.40 0.085 0.089 0.093 e 2.85 3.00 3.15 0.111 0.117 0.122 e2 1.50 1.60 1.70 0.058 0.062 0.066 e 0.650 bsc 0.024 bsc l 0.30 0.35 0.40 0.011 0.013 0.015
esmt/emp ema2011 elite semiconductor memory technology inc./elite micropower inc. publication date: jul. 2010 revision: 2.1 16/18 package dimensions z wcsp - 9l (1.45x1.45 mm) symbol dimensions in millimeter min. typ. max. a 0.585 0.650 0.715 a1 0.210 0.235 0.260 a2 0.355 0.380 0.405 d 1.420 1.460 1.500 d1 0.50 z 0.23
esmt/emp ema2011 elite semiconductor memory technology inc./elite micropower inc. publication date: jul. 2010 revision: 2.1 17/18 revision history revision date description 2.0 2009.05.08 emp transferred from version 1.3 2.1 2010.07.29 to correct the pins of vop & von descried mistake for all page.
esmt/emp ema2011 elite semiconductor memory technology inc./elite micropower inc. publication date: jul. 2010 revision: 2.1 18/18 important notice all rights reserved. no part of this document may be repr oduced or duplicated in any form or by any means without the prior permission of esmt. the contents contained in this docume nt are believed to be accurate at the time of publication. esmt assumes no responsibility for any error in this document, and reserves the right to change the products or specification in this document without notice. the information contained herein is pr esented only as a guide or examples for the application of our products. no responsibility is assumed by esmt for any infringement of patents, copyrights, or other intellect ual property rights of third parties which may result from its use. no license, either express , implied or otherwise, is granted un der any patents, copyrights or other intellectual property righ ts of esmt or others. any semiconductor devices may have in herently a certain rate of failure. to minimize risks associated with cu stomer's application, adequate design and operating safeguards against inju ry, damage, or loss from such failure, should be provided by the customer when making application designs. esmt's products are not authorized for use in critical applications such as, but not limited to, life support devices or system, where failure or abnormal operation may directly affect human lives or cause physical injury or property damage. if products described here are to be used for such kinds of application, purchaser must do its own quality assurance testing appropriate to such applications.

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